01644nam a2200313 a 4500001001400000003000400014008003100018020001800049020001800067039006600085041000800151099001000159100003300169245019500202260005400397300001100451505009800462505012800560505009300688505007600781505026100857650002201118650002201140650004801162700002901210856006701239942000701306999001701313vtls000080320MTX180612             001 0 eng d  a9789814583183  a9789814583190 9a201806121036bstaffc201607151203dstaffy201605041240zadmin0 aeng  aEbook1 aIñiguez, Benjamin.9118331  aFrontiers in electronics:badvanced modeling of nanoscale electron devices (Selected topics in electronics and systems, vol. 54)/h[electronic resource] /cTor A. Benjamin;Fjeldly Iñiguez.  bWorld Scientific Publishing Co. Pte. Ltd.,c2014.  a204 p.0 gChapter, Lesson, ParttMONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ONINSULATOR MOSFETs.0 gChapter, Lesson, ParttANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME.0 gChapter, Lesson, ParttPHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs.0 gChapter, Lesson, ParttCOMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs.0 aCover, Title,Frontiers in electronics: advanced modeling of nanoscale electron devices (Selected topics in electronics and systems, vol. 54)--Preface, Introduction, TOC,PREFACE--Preface, Introduction, TOC,CONTENTS--References, Appendix, Index,AUTHOR INDEX. 0aEngineering98296 0aAcoustics9118332 0aElectrical & Electronic Engineering91183331 aFjeldly, Tor A..911833440uhttp://portal.igpublish.com/iglibrary/search/WSPCB0005790.html  c10  c76869d76869