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| 008 | 180612 001 0 eng d | ||
| 020 | _a9789814583183 | ||
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| 039 | 9 |
_a201806121036 _bstaff _c201607151203 _dstaff _y201605041240 _zadmin |
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| 041 | 0 | _aeng | |
| 099 | _aEbook | ||
| 100 | 1 |
_aIñiguez, Benjamin. _9118331 |
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| 245 |
_aFrontiers in electronics: _badvanced modeling of nanoscale electron devices (Selected topics in electronics and systems, vol. 54)/ _h[electronic resource] / _cTor A. Benjamin;Fjeldly Iñiguez. |
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| 260 |
_bWorld Scientific Publishing Co. Pte. Ltd., _c2014. |
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| 300 | _a204 p. | ||
| 505 | 0 |
_gChapter, Lesson, Part _tMONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ONINSULATOR MOSFETs. |
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| 505 | 0 |
_gChapter, Lesson, Part _tANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME. |
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| 505 | 0 |
_gChapter, Lesson, Part _tPHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs. |
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| 505 | 0 |
_gChapter, Lesson, Part _tCOMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs. |
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| 505 | 0 | _aCover, Title,Frontiers in electronics: advanced modeling of nanoscale electron devices (Selected topics in electronics and systems, vol. 54)--Preface, Introduction, TOC,PREFACE--Preface, Introduction, TOC,CONTENTS--References, Appendix, Index,AUTHOR INDEX. | |
| 650 | 0 |
_aEngineering _98296 |
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| 650 | 0 |
_aAcoustics _9118332 |
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| 650 | 0 |
_aElectrical & Electronic Engineering _9118333 |
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| 700 | 1 |
_aFjeldly, Tor A.. _9118334 |
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| 856 | 4 | 0 | _uhttp://portal.igpublish.com/iglibrary/search/WSPCB0005790.html |
| 942 | _c10 | ||
| 999 |
_c76869 _d76869 |
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